1. A 90nm Floating Gate "B4-Flash" Memory Technology - Breakthrough of the Gate Length Limitation on NOR Flash Memory - By M. Mihara, Presented at 2009 IMW 2. Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance - By S. Shukuri. Presented at 2008 NVSM Workshop 3. A Highly Reliable logic NVM "eCFlash (embedded CMOS Flash)" Utilizing Differential Sense-Latch Cell with Charge-Trapping Storage By T. Ogura. Presented at 2008 NVSM Workshop 4. Floating Gate B4-Flash Memory Technology Utilizing Novel Programming Scheme - Highly Scalable, Efficient and Temperature Independent Programming - By S. Shukuri. Presented at 2007 NVSM Workshop 5. A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s Programming Speed By M. Mihara. Presented at 2007 NVSM Workshop 6. A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash) By S. Shukuri. Presented at 2006 Symposium on VLSI Technology