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[B4-Flash, high speed and highly reliable flash memory utilizing novel programming mechanism]
B4-Flash is GENUSION proprietary flash memory utilizing novel mechanism
of B4-HE (Back Bias assisted Band-to-Band tunneling Hot Electron) programming.
B4-Flash realizes excellent features of high speed programming and high
reliability, in addition to high speed read equivalent to NOR and low cost
close to NAND simultaneously. B4-Flash can realize superior reliability
thanks to its Pch memory transistors. Excellent data retention capability
under high temperature after heavy erase/write stress has been confirmed.
NOR type Flash memory:
Non-volatile semiconductor memory for storing programs of digital equipments
with high speed read performance. Device structure is adequate for read
performance, but has challenge in making memory cell size smaller due to
its programming mechanism.
NAND type Flash memory:
Low cost non-volatile memory mainly stores digital data such as pictures
and music to be used for SD card and USB memory. Device structure makes
it possible to realize memory cell size very small which is ideal for planar
device, but is not suitable for high speed random access of program and
data due to its programming mechanism.
[GENUSION proprietary novel operation mechanism, B4-HE(Hot Electron) program
operation]
B4-Flash utilizes innovative patented invention; using a Pch MOS transistor for the memory cell and program operation performed by following three steps,
1) Electrons are generated by band-to-band tunneling mechanism,
2) Generated electrons are accelerated by back bias,
3) Part of the accelerated electrons become hot and are injected to floating gate.
[B4-Flash realizes world smallest NOR memory cell]
Gate length scaling limit of conventional NOR flash is said to be about 100nm to 110nm. B4-Flash can break through this limitation thanks to its novel programming mechanism. GENUSION has been confirmed B4-Flash operation with gate length of 50nm test vehicle. Because of this good scalability and other features, B4-Flash can achieve the small cell size of one half of that of NOR and close to that of NAND. GENUSION has confirmed B4-Flash array operation and high reliability by evaluating 130nm 4Mbit and 90nm 64Mbit test chips. Now developing 90nm high density Flash memory product.
B4-Flash prospective market]
Due to scaling limitation , conventional NOR flash is facing difficulties to turn into higher density. B4-Flash is expected as future program storage because of its high speed read performance, smaller memory cell size = lower chip cost and scalability in advanced semiconductor process technologies. “The Best Future Device Architecture” was awarded to GENUSION’s B4-Flash in Nokia’s Technology Innovation Competition “Mobile Rules ‘08”. B4-Flash with excellent data retention performance, is also expected for new applications where conventional flash technologies are difficult to use. |
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